Characterization of Si interface in FIS structure by photoreflectance spectroscopy

被引：0

作者：

Kanda, H ^{[1
]}

Sohgawa, M

Toyoshima, Y

Kanashima, T

Okuyama, M

Fujimoto, A

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Area Mat & Device Phys, Osaka 560853, Japan

[2] Wakayama Natl Coll Technol, Dept Elect Engn, Gobo 6440023, Japan

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷

关键词：

photoreflectance spectroscopy; MFIS; interface stress;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

SrBi2Ta2O9(SBT) thin film grown on SiO2/Si by a pulsed laser deposition was evaluated by photoreflectance spectroscopy (PRS) which is one of the non-destructive techniques to characterize an interface. The stress of a SiO2/Si interface of ferroelectric-insulator-semiconductor (FIS) structure has been evaluated by using this method. As a result, there is a tensile stress which is larger than that before deposition, and the stress becomes large according to increasing SBT thickness. Moreover, when ferroelectric thin film is poled, the stress becomes small with increase of the voltage.

引用

页码：S1072 / S1075

页数：4

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