Challenges facing GaN-based electronic devices

被引：0

作者：

Via, GD ^{[1
]}

Crespo, A ^{[1
]}

DeSalvo, G ^{[1
]}

Jenkins, T ^{[1
]}

King, J ^{[1
]}

Sewell, J ^{[1
]}

机构：

[1] USAF, Res Lab, AFRL, SND, Wright Patterson AFB, OH 45433 USA

来源：

COMPOUND SEMICONDUCTOR POWER TRANSISTORS II AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXII) | 2000年 / 2000卷 / 01期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based electronic devices are aggressively being developed. The theoretical potential of this technology is currently being demonstrated. However, there are still issues to be addressed before III-nitride electronics move beyond laboratory demonstrations to an applied device technology. This paper presents work addressing some of those issues under investigation at AFRL.

引用

页码：3 / 17

页数：15

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