A CMOS reconfigurable distributed amplifier employing large-signal MGTR technique

被引：0

作者：

Zhang, Ying ^{[1
,2
]}

Ma, Kaixue ^{[2
]}

Zhang, Changchun ^{[1
]}

Zhang, Yi ^{[1
]}

机构：

[1] Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab Radio Frequency Integ, Nanjing, Jiangsu, Peoples R China

[2] Univ Elect Sci & Technol China, Sch Phys Elect, Chengdu, Peoples R China

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2017年 / 59卷 / 09期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

artificial transmission line (ATL); distributed amplifier (DA); large-signal (LS) multigated transistor (MGTR); power added efficiency (PAE); reconfigurable;

D O I：

10.1002/mop.30743

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a reconfigurable CMOS distributed amplifier (DA) employing a large-signal (LS) multigated transistor (MGTR) topology for high efficiency and linearity. With separated gate bias voltage of gain cells, the DA can be reconfigurable to work at normal-gain (NG) mode and high-efficiency (HE) mode. The gradually changed artificial transmission line (ATL) connected to the output port is designed to increase the output power while maintaining good output impedance matching. At NG mode, the DA achieves an average forward gain of 11.8 dB from 1.6 to 17.8 GHz, while providing the output power at 1 dB output compression point (OP1 dB) of 5.8-9.64 dBm with the power added efficiency (PAE) of 2.2%-5.2% for frequencies 3-16 GHz. At HE mode, the DA has an average forward gain of 7.6 dB over 1-18.8 GHz, and achieves the OP1dB of 6.9-9.65 dBm with the high PAE of 6.6%-10.8% for frequencies 3-16 GHz.

引用

页码：2371 / 2375

页数：5

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