Stimulated Raman scattering of laser in heavily doped semiconductors

An intense short pulse laser propagating through a heavily doped degenerate semiconductor, parametrically excites a free carrier space charge mode and back scattered electromagnetic mode via free carrier nonlinearity. Landau damping and collisional damping of the decay waves determine the threshold for the instability. Above the threshold, the growth rate scales as gamma similar to(nu(0)/2c)(epsilon(L)omega omega(0))(1/2), where nu(0) is the free carrier oscillatory velocity, c is the velocity of light in vacuum, epsilon(L) is the lattice permittivity, omega is the frequency of the space charge mode, and omega(0) is the pump frequency. (C) 2010 American Institute of Physics. [doi:10.1063/1.3429256]