A compact temperature sensor for a 1.0 μm CMOS technology using lateral p-n-p transistors

A compact temperature sensor using lateral p-n-p bipolar transistors has been fabricated and tested in a standard 1.0 mu m digital n-well CMOS process. Like their n-p-n counterparts in p-well processes, these lateral p-n-p devices exhibit good lateral beta. The accuracy of the temperature sensor is close to the performances obtained in bipolar technology, an output proportional to absolute temperature is obtained (0.54 mV/K) from 0 to +70 degrees C, although the sensor can be used in wide-ranging applications after curvature correction. The device has an area of only 0.018 mm(2). (C) 1998 Published by Elsevier Science Ltd. All rights reserved.