V3+:YAG as the saturable absorber for a diode-pumped quasi-three-level dual-wavelength Nd:GGG laser

被引:57
|
作者
Huang, Hai-Tao [1 ]
He, Jing-Liang [1 ]
Zhang, Bai-Tao [1 ]
Yang, Jian-Fei [1 ]
Xu, Jin-Long [1 ]
Zuo, Chun-Hua [1 ]
Tao, Xu-Tang [1 ]
机构
[1] Shandong Univ, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
来源
OPTICS EXPRESS | 2010年 / 18卷 / 04期
基金
中国国家自然科学基金;
关键词
YTTRIUM-ALUMINUM-GARNET; OPTICAL-SPECTRA; V-YAG; NM; CRYSTAL; ABSORPTION; 1.34-MU-M;
D O I
10.1364/OE.18.003352
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The performance of a diode-end-pumped passively Q-switched dual-wavelength Nd:GGG laser operating at 932.9 and 936.5nm with V3+:YAG as the saturable absorber was demonstrated for the first time to the best of our knowledge. The maximum dual-wavelength average output power of 150mW was achieved with a T = 2% output coupler under the absorbed pump power of 2.55W, corresponding to the optical-to-optical conversion and slope efficiency of 5.9% and 8.0%, respectively. The minimum pulse width was 395ns with the pulse repetition frequency of 140kHz, which was attained with a T = 5% output coupler under the absorbed pump power of 2.55W. (C) 2010 Optical Society of America
引用
收藏
页码:3352 / 3357
页数:6
相关论文
共 50 条
  • [41] Diode-Side-Pumped Passively Q-Switched Nd:YAP Laser Operating at 1.34 μm with V3+:YAG Saturable Absorber
    Chen Xinyu
    Liu Jingliang
    Yu Yongji
    Li Taojie
    Sun Hongtao
    Jin Guangyong
    [J]. Journal of Russian Laser Research, 2015, 36 : 86 - 91
  • [42] Diode-Side-Pumped Passively Q-Switched Nd:YAP Laser Operating at 1.34 μm with V3+:YAG Saturable Absorber
    Chen Xinyu
    Liu Jingliang
    Yu Yongji
    Li Taojie
    Sun Hongtao
    Jin Guangyong
    [J]. JOURNAL OF RUSSIAN LASER RESEARCH, 2015, 36 (01) : 86 - 91
  • [43] Quasi-three-level Nd:YAG laser under diode pumping directly into the emitting level
    Bjurshagen, S
    Koch, R
    Laurell, F
    [J]. OPTICS COMMUNICATIONS, 2006, 261 (01) : 109 - 113
  • [44] Pulse compression in diode-pumped doubly Q-switched Nd:GdVO4 laser with both V3+:YAG and Co2+:LMA saturable absorber
    Ma, J.
    Zhai, Y.
    Li, D.
    Fang, C.
    Liu, D.
    [J]. LASER PHYSICS, 2011, 21 (04) : 680 - 683
  • [45] A diode-pumped Nd:YAlO3 dual-wavelength yellow light source
    Zhang, Jing
    Fu, Xihong
    Zhai, Pei
    Xia, Jing
    Li, Shutao
    [J]. LASER PHYSICS, 2013, 23 (11)
  • [46] Diode-pumped passive Q-switched 946 nm Nd:YAG laser with a GaAs saturable absorber
    Wang, SM
    Zhang, QL
    Zhang, L
    Zhang, CY
    Zhang, DX
    Feng, BH
    Zhang, ZG
    [J]. CHINESE PHYSICS LETTERS, 2006, 23 (03) : 619 - 621
  • [47] Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber
    Ma, Jiasai
    Li, Yufei
    Sun, Yuming
    Xu, Jinlong
    He, Jingliang
    [J]. OPTICS COMMUNICATIONS, 2009, 282 (05) : 958 - 961
  • [48] Analysis of a laser-diode end-pumped passively Q-switched Nd:GdVO4 laser with V3+:YAG saturable absorber
    Ma, J.
    Li, Y.
    Sun, Y.
    Qi, H.
    Lan, R.
    Hou, X.
    [J]. LASER PHYSICS, 2009, 19 (03) : 384 - 388
  • [49] Experimental investigation of a diode-pumped powerful continuous-wave dual-wavelength Nd:YAG laser at 946 and 938.6 nm
    Chen, F.
    Yu, X.
    Yan, R. P.
    Li, X. D.
    Li, D. J.
    Yang, G. L.
    Xie, J. J.
    Guo, J.
    [J]. LASER PHYSICS, 2013, 23 (05)
  • [50] Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber
    Cong, Wen
    Li, Dechun
    Zhao, Shengzhi
    Yang, Kejian
    Li, Xiangyang
    Qiao, Hui
    Liu, Ji
    [J]. OPTICS COMMUNICATIONS, 2014, 332 : 292 - 295