Electrical transport properties of amorphous CNx/p-Si heterostructures

The electrical transport properties of amorphous CN(x)/p-Si heterostructures fabricated using reactive-facing-target sputtering were investigated systematically. The obvious rectifying effect is observed in the I-V curves for the heterostructures fabricated at the nitrogen partial pressure (P(N2)) of 20%, and the resistance of the heterostructures in both the forward and reverse voltage ranges increases with the decrease of the current and temperature. At low-voltage range, the resistance satisfies the relation of log R proportional to log I, and the slope of the log R proportional to log I plot's increases with the decrease of temperature. The electrical transport characteristic of the heterostructures can be affected by the changes of the number, and cluster size of sp(2) C and the by the changes of the number and cluster size of sp(2) C and the ratio of N-C(sp(2))/N-C(sp(3)) by adjusting P(N2) significantly, and the good rectifying effect of the heterostructures fabricated at a certain condition makes them useful in the field of electronic devices. (C) 2010 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim