High-resolution photoemission electron spectroscopy study on the oxynitridation of 6H-SiC(0001)-√3 x √3R30° surface

被引：3
|
作者：
Labis, J
Oh, J
Namatame, H
Taniguchi, M
Hirai, M
Kusaka, M
Iwami, M
机构：
[1] Hiroshima Univ, Hiroshima Ctr Synchrotron Radiat, Higashihiroshima 7398526, Japan
[2] Okayama Univ, Fac Sci, Res Lab Surface Sci, Okayama 7008530, Japan
来源：
APPLIED SURFACE SCIENCE | 2004年 / 237卷 / 1-4期
关键词：
6H-SiC; oxynitridation; oxidation; photoemission spectroscopy;
D O I：
10.1016/j.apsusc.2004.06.093
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The root3 x root3R30degrees reconstructed surface of 6H-SiC(0001) was exposed to N2O from 10 L to similar to 10(6) L at sample temperatures ranging from 500 to 800 degreesC. The Si 2p emission spectra showed fast oxide formation for the first 10 L of N2O exposure and thicker oxide layer were formed at higher sample temperature. The valence band spectra at different exposures did not change much, which may denote saturation of the formed oxide layer. The deconvolution of the Si 2p spectra revealed four oxidation states: Si4+; Si3+; Si2+; and Si+. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：170 / 175
页数：6
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