1700V 34m Ω 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region

被引：0

作者：

Ni, Weijiang ^{[1
,2
,3
,4
]}

Wang, Xiaoliang ^{[1
,2
,3
]}

Xiao, Hongling ^{[1
,2
,3
]}

Xu, Miaoling ^{[4
]}

Li, Mingshan ^{[4
]}

Schlichting, Holger ^{[5
]}

Erlbacher, Tobias ^{[5
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R China

[3] Univ Chinese Acad Sci, Sch Microelect, Beijing, Peoples R China

[4] Beijing Century Goldray Semicond Co Ltd, Power Device Dept, Beijing, Peoples R China

[5] Fraunhofer Inst Integrated Syst & Device Technol, Erlangen, Germany

来源：

2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2019年

关键词：

4H-SiC; MOSFET; JFET region; FLR; subthreshold swing;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

in this paper, we designed and fabricated 1700V 4H-SiC MOSFETs. 2D TCAD tool was used to optimize the MOSFET cell and field limiting ring junction termination. Retrograde profile doping is formed by N+ ion implantation in the junction field-effect transistor region, which reduces the on-resistance effectively. Finally, the on-resistance of 34 milliohm and the threshold voltage of 1.56V are obtained from the fabricated MOSFETs. A subthreshold swing of 164 mV/decade was measured, and the interface state density was calculated to be 3.6E11 cm(-2)eV(-1).

引用

页数：3

共 50 条

[1] High temperature characterization of normally-on 4H-SiC junction field-effect transistor
Zhang, Yimeng
Tang, Meiyan
Song, Qingwen
Tang, Xiaoyan
Lv, Hongliang
Liu, Sicheng
[J]. SUPERLATTICES AND MICROSTRUCTURES, 2016, 99 : 113 - 117
[2] Fabrication and Characterization of 1700V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors
Shen Hua-Jun
Tang Ya-Chao
Peng Zhao-Yang
Deng Xiao-Chuan
Bai Yun
Wang Yi-Yu
Li Cheng-Zhan
Liu Ke-An
Liu Xin-Yu
[J]. CHINESE PHYSICS LETTERS, 2015, 32 (12)
[3] 1530 V, 16.8 mΩ•cm2, 4H-SiC normally-off vertical junction field-effect transistor
Fursin, LG
Zhao, JH
Weiner, M
[J]. ELECTRONICS LETTERS, 2004, 40 (04) : 270 - 271
[4] High Efficiency 1700V 4H-SiC UMOSFET with Local Floating Superjunction
Goh, Jinyoung
Kim, Kwangsoo
[J]. 2020 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC), 2020,
[5] Design and processing of high-voltage 4H-SiC trench junction field-effect transistor
Zhu, L
Chow, TP
[J]. SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1231 - 1234
[6] 4H-SiC normally-off vertical junction field-effect transistor with high current density
Tone, K
Zhao, JH
Fursin, L
Alexandrov, P
Weiner, M
[J]. IEEE ELECTRON DEVICE LETTERS, 2003, 24 (07) : 463 - 465
[7] 1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation
Hull, B. A.
Ryu, S. -H.
Zhang, J.
Jonas, C.
O'Loughlin, M.
Callanan, R.
Palmour, J.
[J]. SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 633 - 636
[8] 1700V 4H-SiC MOSFETs and Schottky Diodes for Next Generation Power Conversion Applications
Hull, Brett A.
Henning, Jason
Jonas, Charlotte
Callanan, Robert
Olmedo, Anthony
Sousa, Rich, Jr.
Solovey, James M.
[J]. 2011 TWENTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2011, : 1042 - 1048
[9] Demonstration of first 1050 V, 21.7 mΩ cm2 normally-off 4H-SiC junction field-effect transistor with implanted vertical channel
Zhao, JH
Alexandrov, P
Fursin, L
Weiner, M
[J]. ELECTRONICS LETTERS, 2003, 39 (01) : 151 - 152
[10] Structural and electrical characterization of the 4H-SiC based Junction Field Effect Transistor (JFET)
Shili, K.
Ben Karoui, M.
Gharbi, R.
Fathallah, M.
Ferrero, S.
[J]. 2013 INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING AND SOFTWARE APPLICATIONS (ICEESA), 2013, : 668 - 671

← 1 2 3 4 5 →