Current-voltage characteristics of GaN and AlGaN p-i-n diodes

被引：6
|
作者：
Kuznetsov, NI [1 ]
Irvine, KG
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Cree Res Inc, Durham, NC 27713 USA
来源：
SEMICONDUCTORS | 1998年 / 32卷 / 03期
关键词：
D O I：
10.1134/1.1187392
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The current-voltage characteristics of GaN and Al0.08Ga0.92N p-i-n diodes were investigated. The experimental p-i-n structures were grown by MOCVD on 6H-SiC with Si and Mg as dopants. The i region was formed by simultaneously doping with donor and acceptor impurities during growth. Analysis of the current-voltage characteristics showed that current flow in the p-i-n diodes is due to either drift of thermally excited holes or electron-hole recombination in the i region via impurity centers-just as predicted by the Ashley-Milnes theory. These impurity centers are attributed to Mg acceptor levels. (C) 1998 American Institute of Physics.
引用
收藏
页码：335 / 338
页数：4
相关论文
共 50 条
  • [41] Study of AlGaN/GaN heterostructures p-i-n ultraviolet detector
    Wang, Guosheng
    Xie, Feng
    Wang, Jun
    Wang, Run
    Li, Cong
    Guo, Jin
    9TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR SENSING AND IMAGING, 2019, 10843
  • [42] CURRENT-VOLTAGE CHARACTERISTICS OF ALLOYED AND DIFFUSED P-N JUNCTION DIODES IN INSB
    STOCKER, HJ
    JOURNAL OF APPLIED PHYSICS, 1961, 32 (02) : 322 - &
  • [43] Analysis of current-voltage characteristics of the HgCdTe diodes with a parasite p-n junction
    Qizhong Yunshu Jixie/Hoisting and Conveying Machinery, 1996, (11): : 1 - 3
  • [44] Ultrahigh- Voltage SiC p-i-n Diodes With Improved Forward Characteristics
    Kaji, Naoki
    Niwa, Hiroki
    Suda, Jun
    Kimoto, Tsunenobu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (02) : 374 - 381
  • [45] TEMPERATURE-DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF P-I-N GERMANIUM STRUCTURES UNDER DOUBLE INJECTION CONDITIONS
    ALIEV, KM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1451 - 1452
  • [46] Current-voltage characteristics of n/n lateral polarity junctions in GaN
    Aleksov, Aleksandar
    Collazo, Ramon
    Mita, Seiji
    Schlesser, Raoul
    Sitar, Zlatko
    APPLIED PHYSICS LETTERS, 2006, 89 (05)
  • [47] Temperature and band gap dependence of GaAsBi p-i-n diode current-voltage behaviour
    Richards, R. D.
    Harun, F.
    Nawawi, M. R. M.
    Liu, Y.
    Rockett, T. B. O.
    David, J. P. R.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (19)
  • [48] Temperature dependence of current-voltage characteristics in highly doped Ag/p-GaN/In Schottky diodes
    Cinar, K.
    Yildirim, N.
    Coskun, C.
    Turut, A.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (07)
  • [49] Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes
    Megherbi, M. L.
    Pezzimenti, F.
    Dehimi, L.
    Rao, S.
    Della Corte, F. G.
    SOLID-STATE ELECTRONICS, 2015, 109 : 12 - 16
  • [50] INFLUENCE OF EXCLUSION ON CURRENT-VOLTAGE CHARACTERISTICS OF AN N-P-I-STRUCTURE
    FURSIN, GI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (06): : 711 - 713
12345