Subminiature Light Sources Based on Semiconductor Nanostructures

被引：1

作者：

Gaisler, V. A. ^{[1
]}

Derebezov, I. A. ^{[1
]}

Gaisler, A., V ^{[1
]}

Dmitriev, D., V ^{[1
]}

Toropov, A., I ^{[1
]}

Kachanova, M. M. ^{[1
]}

Zhivodkov, Yu A. ^{[1
]}

Kozhuhov, A. S. ^{[1
]}

Scheglov, D., V ^{[1
]}

Latyshev, A., V ^{[1
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2020年 / 56卷 / 05期

关键词：

semiconductor quantum dots; exciton; biexciton; fine structure splitting; sub-Poisson statistics; single photon emitters; emitters of entangled photon pairs; vertical-cavity surface-emitting laser; chip-scale atomic clock;

D O I：

10.3103/S8756699020050052

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The paper states the operating principles of subminiature semiconductor emitters and offers the research results of the performance for those emitters that were developed and manufactured at the Rzhanov Institute of Semiconductor physics of SB RAS over the last three years. Single photon emitter based on AlxIn1-xAs/AlyGa1-yAs quantum dots has been developed. Hanbury Brown and Twiss experiment has been carried out to measure the photon statistics. The photon correlation function demonstrates a clear photon antibunching effect (g(2)(0)approximate to 0.04), which is a direct evidence of single photon emission by single AlxIn1-xAs quantum dots. The results of developing single-mode vertical-cavity surface-emitting lasers with a wavelength of 794.8 nm future-oriented for application in chip-scale atomic clock and operating at the transition 5S(1/2)-> 5P(1/2) of Rb-87 are reported.

引用

页码：518 / 526

页数：9

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