Subminiature Light Sources Based on Semiconductor Nanostructures

被引：1

作者：

Gaisler, V. A. ^{[1
]}

Derebezov, I. A. ^{[1
]}

Gaisler, A., V ^{[1
]}

Dmitriev, D., V ^{[1
]}

Toropov, A., I ^{[1
]}

Kachanova, M. M. ^{[1
]}

Zhivodkov, Yu A. ^{[1
]}

Kozhuhov, A. S. ^{[1
]}

Scheglov, D., V ^{[1
]}

Latyshev, A., V ^{[1
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2020年 / 56卷 / 05期

关键词：

semiconductor quantum dots; exciton; biexciton; fine structure splitting; sub-Poisson statistics; single photon emitters; emitters of entangled photon pairs; vertical-cavity surface-emitting laser; chip-scale atomic clock;

D O I：

10.3103/S8756699020050052

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The paper states the operating principles of subminiature semiconductor emitters and offers the research results of the performance for those emitters that were developed and manufactured at the Rzhanov Institute of Semiconductor physics of SB RAS over the last three years. Single photon emitter based on AlxIn1-xAs/AlyGa1-yAs quantum dots has been developed. Hanbury Brown and Twiss experiment has been carried out to measure the photon statistics. The photon correlation function demonstrates a clear photon antibunching effect (g(2)(0)approximate to 0.04), which is a direct evidence of single photon emission by single AlxIn1-xAs quantum dots. The results of developing single-mode vertical-cavity surface-emitting lasers with a wavelength of 794.8 nm future-oriented for application in chip-scale atomic clock and operating at the transition 5S(1/2)-> 5P(1/2) of Rb-87 are reported.

引用

页码：518 / 526

页数：9

共 50 条

[1] Subminiature Light Sources Based on Semiconductor Nanostructures
V. A. Gaisler
I. A. Derebezov
A. V. Gaisler
D. V. Dmitriev
A. I. Toropov
M. M. Kachanova
Yu. A. Zhivodkov
A. S. Kozhuhov
D. V. Scheglov
A. V. Latyshev
[J]. Optoelectronics, Instrumentation and Data Processing, 2020, 56 : 518 - 526
[2] Broadband visible light absorber based on ultrathin semiconductor nanostructures
黄林锦
李嘉麒
卢漫仪
陈彦权
朱宏基
刘海英
[J]. Chinese Physics B, 2020, 29 (01) : 300 - 305
[3] Broadband visible light absorber based on ultrathin semiconductor nanostructures
Huang, Lin-Jin
Li, Jia-Qi
Lu, Man-Yi
Chen, Yan-Quan
Zhu, Hong-Ji
Liu, Hai-Ying
[J]. CHINESE PHYSICS B, 2020, 29 (01)
[4] Interband absorption of light in semiconductor nanostructures
Pokutnyi, SI
[J]. SEMICONDUCTORS, 2003, 37 (06) : 718 - 722
[5] Interband absorption of light in semiconductor nanostructures
S. I. Pokutnyi
[J]. Semiconductors, 2003, 37 : 718 - 722
[6] Semiconductor quantum light sources
Shields, Andrew J.
[J]. NATURE PHOTONICS, 2007, 1 (04) : 215 - 223
[7] Semiconductor quantum light sources
Andrew J. Shields
[J]. Nature Photonics, 2007, 1 : 215 - 223
[8] SEMICONDUCTOR LIGHT-SOURCES
CUNO, HH
[J]. NATURWISSENSCHAFTEN, 1984, 71 (12) : 616 - 622
[9] Anorganic semiconductor light sources
Späth, W
[J]. GLASS SCIENCE AND TECHNOLOGY, 2005, 78 : 60 - 66
[10] Colloidal Quantum Light Sources Based on Asymmetric Semiconductor Nanocrystals
Pisanello, Ferruccio
Luigi, Martiradonna
Lemenager, Godefroy
Carbone, Luigi
Bramati, Alberto
De Vittorio, Massimo
[J]. 2012 14TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON 2012), 2012,

← 1 2 3 4 5 →