Structural and electrical properties of PbTiO3 thin films on conductive oxide LaNiO3 coated Si substrates prepared by sol-gel method

被引：18
|
作者：
Li, AD [1 ]
Wu, D
Ge, CZ
Wang, H
Wang, M
Wang, M
Liu, ZG
Ming, NB
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China
[3] Ctr Adv Studies Sci & Technol Microstruct, Nanjing 210093, Peoples R China
[4] Shandong Univ, Natl Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
THIN SOLID FILMS | 2000年 / 375卷 / 1-2期
关键词：
deposition process; electrical properties and measurements; LaNiO3; film; PbTiO3;
D O I：
10.1016/S0040-6090(00)01248-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Conductive LaNiO3 (LNO) thin films were grown on Si substrates by metalorganic decomposition (MOD) and their application as the bottom electrodes for the growth of sol-gel derived PbTiO3 (PT) thin films. The structure, morphology and electrical properties of the multilayer films were characterized by some analytical techniques and electrical measurements. PT film on LNO/Si had pure perovskite phase with sharp cross-section and small surface roughness. Most Raman modes of PT films shifted to the low frequency due to the pressure effect in the films. PT capacitor showed saturated hysteresis loop, higher resistivity and breakdown voltage. These results indicated the PT/LNO/Si heterostructure fabricated by sol-gel and MOD techniques to be a promising combination for microelectronic device. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：220 / 223
页数：4
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