Power, reliability, and stability improvements extend utility of 980-nm pump lasers

被引:0
|
作者
Strite, T
Mohrdiek, S
Schmidt, B
机构
[1] JDS Uniphase, Mkt, Plymouth PL6 7RG, Devon, England
[2] JDS Uniphase AG, 980 NM Pump Laser Applicat, CH-8045 Zurich, Switzerland
[3] JDS Uniphase AG, Adv 980 NM Chip Design, CH-8045 Zurich, Switzerland
来源
关键词
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
New generations of 980-nm erbium-doped fiber amplifier pump lasers will enable EDFAs to keep pace with demand from the booming optical networking market.
引用
收藏
页码:35 / +
页数:3
相关论文
共 50 条
  • [31] Ortel's 980-nm pump laser re-emerges
    Terrell, G
    PHOTONICS SPECTRA, 2000, 34 (02) : 61 - 61
  • [32] SILICON RECRYSTALLIZATION EFFECTS IN MIRROR COATINGS OF HIGH-POWER 980-NM INGAAS/ALGAAS LASERS
    EPPERLEIN, PW
    GASSER, M
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 537 - 542
  • [33] HIGH-POWER 980-NM NONABSORBING FACET LASERS (VOL 30, PG 1766, 1994)
    UNGAR, JE
    KWONG, NSK
    OH, SW
    CHEN, JS
    BARCHAIM, N
    ELECTRONICS LETTERS, 1995, 31 (01) : 77 - 78
  • [34] High-power 980-nm pump laser modules for erbium-doped fiber amplifiers
    Achtenhagen, M
    McElhinney, M
    Nolan, S
    Hardy, A
    APPLIED OPTICS, 1999, 38 (27) : 5765 - 5767
  • [35] Reliability of High Power/Brightness Diode Lasers Emitting from 790 nm to 980 nm
    Bao, L.
    Bai, J.
    Price, K.
    DeVito, M.
    Grimshaw, M.
    Dong, W.
    Guan, X.
    Zhang, S.
    Zhou, H.
    Bruce, K.
    Dawson, D.
    Kanskar, M.
    Martinsen, R.
    Haden, J.
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS XI, 2013, 8605
  • [36] Very weak dependence on temperature of 980-nm InGaAs/InGaAsP/InGaP lasers
    Ohkubo, Michio
    Iwai, Norihiro
    Ijichi, Tetsuro
    Ninomiya, Takao
    Japanese Journal of Applied Physics, Part 2: Letters, 1994, 33 (9 B):
  • [37] 980-nm master oscillator power amplifiers with nonabsorbing mirrors
    Lammert, RM
    Ungar, JE
    Osowski, ML
    Qi, H
    Newkirk, MA
    Bar Chaim, N
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (09) : 1099 - 1101
  • [38] VERY WEAK DEPENDENCE ON TEMPERATURE OF 980-NM INGAAS/INGAASP/INGAP LASERS
    OHKUBO, M
    IWAI, N
    IJICHI, T
    NINOMIYA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (9B): : L1307 - L1309
  • [39] Comparing 1470-and 980-nm diode lasers for endovenous ablation treatments
    Aktas, Aykut Recep
    Celik, Orhan
    Ozkan, Ugur
    Cetin, Mustafa
    Koroglu, Mert
    Yilmaz, Sevda
    Daphan, Birsen U.
    Oguzkurt, Levent
    LASERS IN MEDICAL SCIENCE, 2015, 30 (05) : 1583 - 1587
  • [40] Anomalous wavelength changes of 980-nm pump laser diodes with antireflection coatings
    Shigihara, K
    Kawasaki, K
    Yagi, T
    Omura, E
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (05) : 1245 - 1247