Reflection z-scan measurements of opaque semiconductor thin films

被引：16
|
作者：
Ganeev, RA [1 ]
Ryasnyansky, AI
机构：
[1] NPO Akadempribor, Tashkent 700125, Uzbekistan
[2] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[3] Univ Paris 06, CNRS, Inst Nanosci Paris, F-75015 Paris, France
[4] Samarkand State Univ, Samarkand 703004, Uzbekistan
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2005年 / 202卷 / 01期
关键词：
D O I：
10.1002/pssa.200406896
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We studied the nonlinear refraction of semiconductor thin films (3As(2)S(3)/As2Se3, and CdS) at the wavelength of 532 nm using the reflection z-scan technique (RZ-scan). The values of nonlinear refractive indices gamma of 3As(2)S(3)/As2Se3 and CdS were calculated to be 5 x 10(-10) cm(2) W-1 and -5.2 x 10(-11) cm(2) W-1. The comparison of RZ-scans and transmission z-scans was carried out for CdS film. The sign of nonlinear refraction of these chalcogenides was discussed in the framework of Kramers-Kronig transformations. (C) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：120 / 125
页数：6
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