Electron field emission of amorphous carbon films

被引:12
|
作者
Hoffmann, U
Weber, A
Lohken, T
Klages, CP
Spaeth, C
Richter, F
机构
[1] Fraunhofer Inst Surface & Thin Film Technol, D-38108 Braunschweig, Germany
[2] Tech Univ Chemnitz, Dept Phys, D-09107 Chemnitz, Germany
关键词
amorphous carbon; electrical properties; electron field emission; sputtering;
D O I
10.1016/S0925-9635(97)00184-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The field emission propel-ties of amorphous carbon prepared by a standard filtered cathodic are process and by an electron cyclotron resonance plasma sputter process were investigated. Field emission (FE) characteristics were measured using plane emitter stripes and a fluorescent screen with 60 mu m spacing. Vacuum are discharge was found to activate FE in most cases. After activation, stable FE started at an applied voltage of 250 V for the filtered are films and 170 V for the ECR films. Current densities up to 1 mA/mm(2) at 450 V were achieved. Because of the field enhancement, emission always took place at the edges of the emitter. Amorphous carbon films prepared by ECR plasma sputtering showed better FE characteristics. They contained small amounts of nitrogen up to 1.7 at. %. Best emitting films had an N-content of 0.6 at. %. A FED demonstrator with a 50 x 50 pixel array (25 x 25 mm(2)) was fabricated. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:682 / 686
页数:5
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