Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal-Organic Vapor Phase Epitaxy

被引：7

作者：

Sala, Elisa M. ^{[1
,2
]}

Godsland, Max ^{[2
]}

Trapalis, Aristotelis ^{[1
,2
]}

Heffernan, Jon ^{[1
,2
]}

机构：

[1] Univ Sheffield, EPSRC Natl Epitaxy Facil, North Campus,Broad Lane, Sheffield S3 7HQ, S Yorkshire, England

[2] Univ Sheffield, Dept Elect & Elect Engn, North Campus,Broad Lane, Sheffield S3 7HQ, S Yorkshire, England

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2021年 / 15卷 / 09期

基金：

英国工程与自然科学研究理事会; “创新英国”项目;

关键词：

atomic force microscopy; droplet epitaxy; III-V quantum dots; metal-organic vapor phase epitaxy; photoluminescence; EMISSION; LAYER; SHAPE;

D O I：

10.1002/pssr.202100283

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InAs quantum dots (QDs) are grown on bare InP(001) via droplet epitaxy (DE) in metal-organic vapor phase epitaxy (MOVPE). Capping layer engineering, used to control QD size and shape, is explored for DE QDs in MOVPE. The method allows for the tuning of the QD emission over a broad range of wavelengths, ranging from the O- to the L-band. The effect of varying the InP capping layer is investigated optically by macro- and micro-photoluminescence (PL, mu PL) and morphologically by transmission electron microscopy (TEM). A strong 500 nm blueshift of the QD emission wavelength is observed when the capping layer is reduced from 20 to 8 nm, which is reflected by a clear size reduction of the buried QDs.

引用

页数：6

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