200-260GHz Solid State Amplifier with 700mW of Output Power

被引：0
|
作者：
Gritters, Darin
Brown, Ken
Ko, Elbert
Griffith, Zach
Urteaga, Miguel
机构：
来源：
2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2015年
关键词：
Indium Phosphide; Heterojunction Bipolar Transistor; Power Amplifier; Power Combining; Millimeter Wave;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
Recent advances in high power millimeter wave (mmW) Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT) Power Amplifier (PA) technology combined with advances in high-frequency power combining have enabled the development of a 200-260GHz solid state power amplifier producing >700mW of output power. This paper outlines the development of a SOmW+ InP HBT PA Monolithic Millimeter wave Integrated Circuit (MMIC) and the technology associated with the subsequent power combining of 32 of these P A MMICs.
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页数：3
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