A 112-134 GHz SiGe Amplifier with Peak Output Power of 120 mW

被引：0
|
作者：
Lin, Hsin-Chang [1 ]
Rebeiz, Gabriel M. [1 ]
机构：
[1] Univ Calif San Diego, ECE, La Jolla, CA 92093 USA
来源：
2014 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM | 2014年
关键词：
Power amplifier (PA); millimeter-wave (mmW) integrated circuits; silicon germanium (SiGe) HBT; D-band;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fully-integrated 8-way power combining amplifier for 120 GHz application in an advanced 90 nm SiGe HBT technology is presented. The single-ended PA breakout has a small-signal gain of 20 dB and P-sat of 12.5-13.8 dBm at 114 to 130 GHz. The 8-way power combining PA achieves a small-signal gain of 15 dB and peak P-sat of 20-20.8 dBm at 114-126 GHz with a PAE of 7.6-6.3 %. To our knowledge, this is the highest power silicon-based D-band amplifier to-date.
引用
收藏
页码：163 / 166
页数：4
相关论文
共 50 条
  • [1] A 110-134-GHz SiGe Amplifier With Peak Output Power of 100-120 mW
    Lin, Hsin-Chang
    Rebeiz, Gabriel M.
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (12) : 2990 - 3000
  • [2] A 70-80-GHz SiGe Amplifier With Peak Output Power of 27.3 dBm
    Lin, Hsin-Chang
    Rebeiz, Gabriel M.
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (07) : 2039 - 2049
  • [3] A 77 GHz Power Amplifier with 19.1 dBm Peak Output Power in 130 nm SiGe Process
    Zhou, Peigen
    Yan, Pinpin
    Chen, Jixin
    Chen, Zhe
    Hong, Wei
    MICROMACHINES, 2023, 14 (12)
  • [4] A 45-GHz SiGe HBT Amplifier at Greater Than 25 % Efficiency and 30 mW Output Power
    Dabag, Hayg-Taniel
    Kim, Joohwa
    Larson, Lawrence E.
    Buckwalter, James F.
    Asbeck, Peter M.
    2011 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2011, : 25 - 28
  • [5] A 28-GHz Class-J Power Amplifier with 18-dBm output power and 35% peak PAE in 120-nm SiGe BiCMOS
    Sarkar, Anirban
    Floyd, Brian
    2014 IEEE 14TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2014, : 71 - 73
  • [6] A 165-230GHz SiGe Amplifier-Doubler Chain With 5dBm Peak Output Power
    Muralidharan, Sriram
    Wu, Kefei
    Hella, Mona
    2016 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2016, : 302 - 305
  • [7] 300 GHz InP HBT amplifier with 10 mW output power
    Yu, H. G.
    Choi, S. H.
    Jeon, S.
    Kim, M.
    ELECTRONICS LETTERS, 2014, 50 (05) : 377 - 378
  • [8] A Wideband High-Efficiency 79-97 GHz SiGe Linear Power Amplifier with > 90 mW Output
    Chang, Michael
    Rebeiz, Gabriel M.
    PROCEEDINGS OF THE 2008 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2008, : 69 - +
  • [9] A Broadband 4.5-15.5-GHz SiGe Power Amplifier With 25.5-dBm Peak Saturated Output Power and 28.7% Maximum PAE
    Kerherve, Eric
    Demirel, Nejdat
    Ghiotto, Anthony
    Larie, Aurelien
    Deltimple, Nathalie
    Pham, Jean-Marie
    Mancuso, Yves
    Garrec, Patrick
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2015, 63 (05) : 1621 - 1632
  • [10] An integrated 2 GHz SiGe power amplifier
    Juurakko, P
    Saari, V
    Ryynänen, J
    Halonen, K
    BEC 2002: Proceedings of the 8th Biennial Baltic Electronic Conference, 2002, : 93 - 94
12345