Characterization of Schottky barrier diodes on a 0.5-inch single-crystalline CVD diamond wafer

被引：42
|
作者：
Umezawa, Hitoshi [1 ]
Mokuno, Yoshiaki [1 ]
Yamada, Hideaki [1 ]
Chayahara, Akiyoshi [1 ]
Shikata, Shin-ichi [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan
来源：
DIAMOND AND RELATED MATERIALS | 2010年 / 19卷 / 2-3期
关键词：
Diamond; Schottky barrier diode; 0.5-inch wafer; Electrical field; Direct wafer method; RATE HOMOEPITAXIAL GROWTH; MICROWAVE PLASMA CVD; HIGH-TEMPERATURE; FILMS; OPERATION;
D O I：
10.1016/j.diamond.2009.11.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, Schottky barrier diodes were fabricated on a 0.5-inch single-crystalline diamond wafer, and the quality of the wafer as well as the performance of the devices were characterized. A rocking curve map indicated that the FWHM of the central 8 x 8-mm region was 10-50 arc sec, which is similar to that of high-quality HPHT single-crystalline diamond. The fabricated pVSBDs on the p(-)/p(+) stacked layer showed a high operation limit for the electrical field, with the mean value of this limit being higher than 2.5 MV/cm when the electrode was smaller than 300 pm. The performance of the devices seemed to be associated with the quality of the wafer. This indicates that the leakage current of a device is determined by the quality of the diamond wafer on which it is fabricated. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：208 / 212
页数：5
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