Effect of bound electronic non-linearities in semiconductor microcavities

被引：0
|
作者：
Sanchez, S [1 ]
De Matos, C [1 ]
Bardinal, V [1 ]
Fontaine, C [1 ]
Pugnet, A [1 ]
机构：
[1] CNRS, LAAS, F-31077 Toulouse, France
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
optical Stark effect; microcavity; semiconductor;
D O I：
10.1016/S1386-9477(02)00840-8
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Simulation results about design of quantum well semiconductor microcavity are presented. Reflectivity modulation via non-resonant excitation at room temperature is optimized. This modulation is generated via absorption and refractive index changes due to the optical Stark effect, which is considered as a rigid blue shift of absorption spectrum. It enables to determinate optimum cavity characteristics and probe wavelength. (C) 2 002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：468 / 469
页数：2
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