High-speed InP-based double heterojunction bipolar transistors and varactors for three-dimensional Terahertz computed tomography

被引：0

作者：

Coquillat, Dominique ^{[1
]}

Nodjiadjim, Virginie ^{[2
]}

Duhant, Alexandre ^{[3
,4
]}

Triki, Meriam ^{[3
]}

Strauss, Olivier ^{[4
]}

Konczykowska, Agnieszka ^{[2
]}

Riet, Muriel ^{[2
]}

Dyakonova, Nina ^{[1
]}

Knap, Wojciech ^{[1
]}

机构：

[1] Univ Montpellier, CNRS, UMR 5221, Lab Charles Coulomb L2C, FR-34095 Montpellier, France

[2] III V Lab, Campus Polytech,1 Ave Augustin Fresnel, FR-91767 Palaiseau, France

[3] T Waves Technol, Dept Res & Dev, Montpellier, France

[4] Univ Montpellier, CNRS, UMR 5506, Lab Informat Robot & Microelect Montpellier LIRM, FR-34095 Montpellier, France

来源：

2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have evaluated the performance of the InP double heterojunction bipolar transistor and InP-based varactors as a room temperature sensitive detectors for THz computed tomography applications. They were used in transmission mode for the 350 GHz and 650 GHz atmospheric windows.

引用

页数：2

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