Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode

被引：57
|
作者：
Yoshida, Harumasa [1 ]
Kuwabara, Masakazu [1 ]
Yamashita, Yoji [1 ]
Uchiyama, Kazuya [1 ]
Kan, Hirofumi [1 ]
机构：
[1] Hamamatsu Photon KK, Hamakita Ku, Shizuoka 4348601, Japan
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 21期
关键词：
aluminium compounds; carrier lifetime; current density; electron-hole recombination; gallium compounds; III-V semiconductors; quantum well lasers; wide band gap semiconductors; LOW-DISLOCATION-DENSITY; BULK GAN; ALGAN; EMISSION;
D O I：
10.1063/1.3442918
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have experimentally investigated the radiative and nonradiative recombination in a GaN/AlGaN multiple-quantum-well laser diode. The each carrier lifetime has been evaluated based on a rate equation analysis of light output-current characteristics of the laser diode. The estimated nonradiative carrier lifetime is 830 ps, and the Auger recombination is negligibly small at room temperature. At a threshold current density of 8 kA cm(-2), the carrier density and the internal quantum efficiency are estimated to be 2.6x10(19) cm(-3) and 34%, respectively. These results are responsible for experimental and theoretical analysis of optical and electrical properties in AlGaN-based laser diodes. (C) 2010 American Institute of Physics. [doi:10.1063/1.3442918]
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页数：3
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