Fabrication of ZnO-based metal-insulator-semiconductor diodes by ion implantation

被引：82
|
作者：
Alivov, YI
Look, DC
Ataev, BM
Chukichev, MV
Mamedov, VV
Zinenko, VI
Agafonov, YA
Pustovit, AN
机构：
[1] RAS, Inst Microelect Technol, Dept Phys, Chernogolovka 142432, Moscow, Russia
[2] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA
[3] RAS, Inst Phys, Daghestan Sci Ctr, Makhachkala 367003, Russia
[4] Moscow MV Lomonosov State Univ, Dept Phys, Moscow, Russia
来源：
SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 12期
关键词：
zinc oxide; implantation; metal-insulator-semiconductor diodes; electroluminescence;
D O I：
10.1016/j.sse.2004.05.063
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A ZnO-based metal-insulator-semiconductor junction has been fabricated using an isolation layer fabricated by N+ ion implantation. I-V dependences show a good rectifying diode-like behavior with a low leakage current of 10(-6) A and a threshold voltage of about 3 V. Ultraviolet light emission under forward bias exhibits a wavelength maximum of 388 nm and a full width at half maximum of 128 meV at room temperature. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2343 / 2346
页数：4
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