Electronic energy levels of Er3+ in ZnInGaS4:Er3+ single crystal and its site symmetry

被引：2
|
作者：
Choe, SH [1 ]
Park, HL
Kim, WT
机构：
[1] Chosun Univ, Dept Phys, Kwangju 501759, South Korea
[2] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
[3] Chonnam Natl Univ, Dept Phys, Kwangju 500757, South Korea
来源：
JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 10期
关键词：
D O I：
10.1063/1.1285839
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnInGaS4 and ZnInGaS4:Er3+ single crystals were grown using the CTR technique. The single crystals grown have a layered crystal structure. These compounds have both a direct and an indirect energy gap. Eight distinctive emission peaks of the ZnInGaS4:Er3+ single crystal were observed at 10 K. These photoluminescence peaks were attributed to the radioactive decay among the 4f split electron energy levels of the Er3+ ions that occupy the C-2v site symmetry of the ZnInGaS4 single crystal host lattice. (C) 2000 American Institute of Physics. [S0021-8979(00)00109-2].
引用
收藏
页码：6089 / 6091
页数：3
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