Insulator-quantum Hall transitions in two-dimensional electron gas containing self-assembled InAs dots

被引：4
|
作者：
Kim, GH [1 ]
Liang, CT
Huang, CF
Lee, MH
Nicholls, JT
Ritchie, DA
机构：
[1] Sungkyunkwan Univ, Dept Elect Engn, Suwon 440746, South Korea
[2] Cavendish Lab, Cambridge CB3 0HE, England
[3] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
[4] ETRI, Basic Res Lab, Taejon 305350, South Korea
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
self-assembled quantum dots; quantum Hall effect; phase diagram;
D O I：
10.1016/S1386-9477(02)00805-6
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present a study of magnetotransport properties in two-dimensional electron gases formed in a GaAs/Al0.33Ga0.67As quantum well, where self-assembled InAs quantum dots have been inserted into the centre of the GaAs well. In a perpendicular magnetic field there are transitions between quantum Hall liquids at filling factors nu = 2 and 1 and the insulating phase from temperature independent points. In the insulating regime we observe nu = 4 and 6 quantum Hall states due to Landau quantisation. We are able to construct a phase diagram in which Shubnikov-de Haas oscillations and insulating behaviour coexist. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：292 / 293
页数：2
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