Effects of the annealing environment on green luminescence of ZnO thin films

被引：23

作者：

Hsieh, Po-Tsung ^{[1
]}

Chin, Huai-Shan ^{[2
]}

Chang, Ping-Kuan ^{[3
]}

Wang, Chih-Ming ^{[4
]}

Chen, Ying-Chung ^{[5
]}

Houng, Mau-Phon ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 886701, Taiwan

[2] Met Ind Res & Dev Ctr, Kaohsiung, Taiwan

[3] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 886701, Taiwan

[4] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung, Taiwan

[5] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung, Taiwan

来源：

PHYSICA B-CONDENSED MATTER | 2010年 / 405卷 / 11期

关键词：

Photoluminescence; Zinc oxide; Defects; Annealing; Green emission; ZINC-OXIDE; EMISSION PROPERTIES; UV EMISSION; PHOTOLUMINESCENCE; GROWTH; ULTRAVIOLET; OXIDATION;

D O I：

10.1016/j.physb.2010.03.021

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects on visible light emission of ZnO thin films annealed by various annealing conditions were investigated. Based on the photoluminescence (PL) properties, stronger green light emission of ZnO thin films was obtained as annealing in oxygen than in other atmospheres. The green light emission increased in intensity with the increased annealing temperature and the strongest green light emission stood at the temperature of 800 degrees C. According to the structural analyses, ZnO films show a preferred (0 0 2) orientation peak and the crystalline became better through annealing process. The surface morphologies became closer to the hexagonal shape and also became denser as annealing in oxygen. Mechanism analysis of PL shows that green emission band should be derived from the defects, which is greatly related to oxygen concentration during annealing, formed in ZnO films. The relationship between green luminescence and oxygen concentration in ZnO thin films was discussed. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2526 / 2529

页数：4

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