3.75 MeV electron irradiation of III-V concentrator tandem cells

被引：0
|
作者：
Andreev, VM [1 ]
Chosta, OI [1 ]
Khvostikov, VP [1 ]
Paleeva, EV [1 ]
Shvarts, MZ [1 ]
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年
关键词：
D O I：
10.1109/PVSC.1997.654257
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
3.75 MeV electron irradiation of LPE-grown AlGaAs/GaAs monolithic two-terminal tandem solar cells was studied. In addition, Al0.35Ga0.65As and GaAs single-junction cells with various junction depths prepared to simulate the top and bottom cells of the tandems were irradiated. The cell degradation was characterized by spectral response and by illuminated current-voltage measurements. The degradation of minority-carrier diffusion length were measured on the AlGaAs and GaAs structures for optimization of the tandem solar cells.
引用
收藏
页码：999 / 1002
页数：4
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