Influence of Increasing Deposition Temperature on Opto-Electrical Properties of Amorphous Carbon Thin Film

Amorphous carbon (a- C) thin films were deposited on silicon ( Si) substrate by pyrolysing camphor oil at various temperatures with thermal chemical vapor deposition (CVD) technique. The deposited a- C thin films were characterized by Current-Voltage (I- V) Measurement and UV-VIS-NIR Spectrophotometer. The electrical and optical properties of these films have been studied. It was found that increasing deposition temperature had influence on the a- C thin films properties. In addition the carrier gas flow showed a secondary impact on the properties of a- C thin films. The resistivity of a- C thin films decreases when the deposition temperature increases. However, at higher deposition temperature the conductivity increases due to the formation of more disorder sp(2) carbon site.