Characterization of the SiO2/Si interface structure and the dielectric properties of N2O-oxynitrided ultrathin SiO2 films

被引：0

作者：

Fukuda, H ^{[1
]}

Endoh, T ^{[1
]}

Nomura, S ^{[1
]}

机构：

[1] Muroran Inst Technol, Fac Engn, Dept Elect & Elect Engn, Muroran, Hokkaido 050, Japan

来源：

PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996 | 1996年 / 96卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The SiO2/Si(100) interface structure and the dielectric properties of rapid thermal N2O-oxynitrided (RTON) ultrathin (<10 nm) SiO2 films have been investigated. Spectroscopic measurements indicate the accumulation of nitrogen atoms (>10(20) atoms/cm(3)) and stable SIN bond formation at the SiO2/Si interface. By using the RTON SiO2 as a gate insulator of sub-halfmicron CMOSFETs, both blocking boron penetration and reducing electron traps have been simultaneously achieved. Thus, this fabrication process is hopeful as a key technology toward sub-0.1-mu m rule MOSLSIs.

引用

页码：15 / 27

页数：13

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