Excitons in Ge/Si Double Quantum Dots

被引：11
|
作者：
Yakimov, A. I. [1 ]
Bloshkin, A. A. [1 ]
Dvurechenskii, A. V. [1 ]
机构：
[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
JETP LETTERS | 2009年 / 90卷 / 08期
基金：
俄罗斯基础研究基金会;
关键词：
ISLANDS;
D O I：
10.1134/S0021364009200041
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The spatial structure of excitons and the oscillator strength characterizing the intensity of interband optical transitions in vertically coupled Ge/Si quantum dots have been theoretically studied. It has been found that the probability of the exciton transition under certain conditions (the sizes of the quantum dots, the separation of the dots) can be much larger (up to a factor of 5) than the value for the case of single quantum dots. It is expected that the results will make it possible to approach the creation of efficient light-emitting and photoreceiving devices based on Si and Ge indirect-band semiconductors.
引用
收藏
页码：569 / 573
页数：5
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