Molecular Dynamics Simulation of Heat Transport in Silicon Nano-structures Covered with Oxide Films

被引：6

作者：

Zushi, Tomofumi ^{[1
]}

Kamakura, Yoshinari ^{[3
]}

Taniguchi, Kenji ^{[3
]}

Ohdomari, Iwao ^{[1
]}

Watanabe, Takanobu ^{[1
,2
]}

机构：

[1] Waseda Univ, Fac Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan

[2] Waseda Univ, Inst Nanosci & Nanotechnol, Shinjuku Ku, Tokyo 1698555, Japan

[3] Osaka Univ, Div Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

THERMAL-CONDUCTIVITY; SI;

D O I：

10.1143/JJAP.49.04DN08

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We perform a series of molecular dynamics (MD) simulations to investigate the heat transport in Si nano-structures, while explicitly including oxide cover layers in the simulation system for the first time. The dependences of thermal diffusion velocity on the thicknesses of the SiO2 film and Si lattice are investigated. The results show that thermal diffusion velocity decreases with Si lattice thickness and does not depend on SiO2 film thickness. (C) 2010 The Japan Society of Applied Physics

引用

页数：4

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