Visible-blind metal-semiconductor-metal structured deep-ultraviolet photodetectors using single-crystalline diamond thin film

被引：0
|
作者：
Liao, Meiyong [1 ]
Koide, Yasuo [1 ]
机构：
[1] Natl Inst Mat Sci, Sensor Mat Ctr, 1-1 Namiki, Tsukuba, Ibaraki 305, Japan
来源：
2006 BIMW: 2006 BEIJING INTERNATIONAL MATERIALS WEEK, PTS 1-4: MAGNESIUM | 2007年 / 546-549卷
关键词：
photodetector; MSM; visible-blind; single-crystalline diamond;
D O I：
10.4028/www.scientific.net/MSF.546-549.1759
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Metal-semiconductor-metal (MSM) planar photodiodes and photoconductors were fabricated on unintentionally doped homoepitaxial diamond thin films deposited on Ib and IIa-type diamond substrated. The MSM photoconductor on the epilayer grown on the Ib-type substrate exhibits the highest discrimination ratio up to 10(8) between 210 rim and visible light and a photocurrent gain around 33 at 220 nm. The persistent photoconductivity is rather week for such kind of photoconductor.
引用
收藏
页码：1759 / +
页数：2
相关论文
共 50 条
  • [41] Effect of Pt NPs in the film on the performances of ZnO-based metal-semiconductor-metal structured ultraviolet photodetector
    Pei Jia-Nan
    Jiang Da-Yong
    Tian Chun-Guang
    Guo Ze-Xuan
    Liu Ru-Sheng
    Sun Long
    Qin Jie-Ming
    Hou Jian-Hua
    Zhao Jian-Xun
    Liang Qing-Cheng
    Gao Shang
    ACTA PHYSICA SINICA, 2015, 64 (06)
  • [42] Enhancing the Ultraviolet/Visible Rejection Ratio of MgxZn1-xO Metal-Semiconductor-Metal Photodetectors Using Oxygen-Plasma Treatment
    Hwang, J. D.
    Chang, Y. C.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (08) : 3234 - 3238
  • [43] Modulation of oxygen vacancies in InSnZnO thin films and applications for high-speed metal-semiconductor-metal ultraviolet photodetectors
    Chen, Bojia
    Zhu, Jiyuan
    Han, Qi
    Wei, Shice
    Zhang, Yu
    Hu, Shen
    Wu, Xuefeng
    Zhang, David W.
    Sun, Qingqing
    Zhang, Rong
    Huang, Kai
    Ji, Li
    APPLIED SURFACE SCIENCE, 2024, 669
  • [44] Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1−xN (0≤x≤0.13)
    J. C. Roberts
    C. A. Parker
    J. F. Muth
    S. F. Leboeuf
    M. E. Aumer
    S. M. Bedair
    M. J. Reed
    Journal of Electronic Materials, 2002, 31 : L1 - L6
  • [45] Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0≤x≤0.13)
    Roberts, JC
    Parker, CA
    Muth, JF
    Leboeuf, SF
    Aumer, ME
    Bedair, SM
    Reed, MJ
    JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (01) : L1 - L6
  • [46] Leakage current reduction of metal-semiconductor-metal photodetectors by using a thin interfacial silicon dioxide layer
    Seto, H
    Rochefort, C
    de Jager, S
    SILICON-BASED OPTOELECTRONICS, 1999, 3630 : 222 - 230
  • [47] Low-noise solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors
    Ting Li
    D. J. H. Lambert
    A. L. Beck
    C. J. Collins
    B. Yang
    M. M. Wong
    U. Chowdhury
    R. D. Dupuis
    J. C. Campbell
    Journal of Electronic Materials, 2001, 30 : 872 - 877
  • [48] Performance improvement of GaN-based ultraviolet metal-semiconductor-metal photodetectors using chlorination surface treatment
    Lee, Hsin-Ying
    Lu, De-En
    Lee, Ching-Ting
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (03):
  • [49] Enhancing the Performance of NiO-Based Metal-Semiconductor-Metal Ultraviolet Photodetectors Using a MgO Capping Layer
    Hwang, Jun-Dar
    Cheng, Yu-An
    IEEE SENSORS JOURNAL, 2021, 21 (24) : 27400 - 27404
  • [50] High-performance AlGaN metal-semiconductor-metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement
    Zhang, Wei
    Xu, Jin
    Ye, Wei
    Li, Yang
    Qi, Zhiqiang
    Dai, Jiangnan
    Wu, Zhihao
    Chen, Changqing
    Yin, Jun
    Li, Jing
    Jiang, Hao
    Fang, Yanyan
    APPLIED PHYSICS LETTERS, 2015, 106 (02)
12345