Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs

Improving material quality is essential for obtaining a high-power device. Surface trapping effects have been present in all HEMT devices, and have significantly impacted the problem of drain-current collapse. In this paper, performance of intentionally non-doped AlGaN vertical bar GaN vertical bar Si (HEMTs) before and after passivation with SiO2 vertical bar SiN is investigated. Capacitance-voltage at various temperatures (C-V-T), a drain current-voltage at various gate voltages (I-ds-V-ds-V-gs), the gate leakage current with various temperatures (I-gs-V-gs-T), and the maximum extrinsic transconductance G(max) are measured; all of these measurements show the impact of SiO2 vertical bar SiN passivation on the performances of AlGaN vertical bar GaN vertical bar Si HEMTs.