Pinch plasma EUV source with particle injection

被引:14
|
作者
McGeoch, MW [1 ]
机构
[1] PLEX LLC, Brookline, MA USA
关键词
D O I
10.1088/0022-3727/37/23/008
中图分类号
O59 [应用物理学];
学科分类号
摘要
Injection of tin droplets into an argon or helium pinch discharge can provide high extreme ultraviolet (EUV) generation efficiency together with small plasma size. We estimate the rates of evaporation, ionization and expansion of a spherical solid density target in a gas pinch discharge. It is found that an initial tendency for the particle to become negatively charged reduces electron heat transport from the plasma. Negative charging is counteracted, and electron heat flux enhanced, by the generation of secondary electrons by ion impact on the surface and by photoemission dependent on the plasma radiation spectrum. When the heat flux exceeds 1 GW cm(-2) the particle can ionize and expand very rapidly to a diameter comparable to that of the pinch plasma. The time required for ionization and the final radius are each estimated as a function of particle size, plasma density and temperature. It is demonstrated that the plasma conditions in the Star Pinch EUV source are suitable for high brightness EUV generation via particle injection.
引用
收藏
页码:3277 / 3284
页数:8
相关论文
共 50 条
  • [1] Plasma pinch EUV source with particle injection
    McGeoch, MW
    [J]. Emerging Lithographic Technologies IX, Pts 1 and 2, 2005, 5751 : 556 - 562
  • [2] EUV source radiated from pinch plasma for semiconductor manufacturing
    Zhang, C. H.
    Katsuki, S.
    Akiyama, H.
    Xu, D. G.
    [J]. EDM 2006: 7TH ANNUAL INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, PROCEEDINGS, 2006, : 14 - 14
  • [3] Star pinch scalable EUV source
    McGeoch, MW
    Pike, CT
    [J]. EMERGING LITHOGRAPHIC TECHNOLOGIES VII, PTS 1 AND 2, 2003, 5037 : 141 - 146
  • [4] Fundamentals and limits for the EUV emission of pinch plasma sources for EUV lithography
    Krücken, T
    Bergmann, K
    Juschkin, L
    Lebert, R
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (23) : 3213 - 3224
  • [5] Compact Z-pinch EUV source for photolithography
    Schriever, G
    Rahe, M
    Stamm, U
    Basting, D
    Khristoforov, O
    Vinokhodov, A
    Borisov, V
    [J]. EMERGING LITHOGRAPHIC TECHNOLOGIES V, 2001, 4343 : 615 - 620
  • [6] Xenon Z-Pinch Discharge Plasma EUV Source Driven by Ultrashort Current Pulse
    Lu, Peng
    Katsuki, Sunao
    Akiyama, Hidenori
    [J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 2016, 44 (07) : 1228 - 1234
  • [7] Performance of gas jet type Z-pinch plasma light source for EUV lithography
    Song, Inho
    Kobayashi, Yasunori
    Sakamoto, Toshiro
    Mohanty, Smruti R.
    Watanabe, Masato
    Okino, Akitoshi
    Kawamura, Toru
    Yasuoka, Koichi
    Horioka, Kazuhiko
    Hotta, Eiki
    [J]. MICROELECTRONIC ENGINEERING, 2006, 83 (4-9) : 710 - 713
  • [8] Characterization and optimization of tin particle mitigation and EUV conversion efficiency in a laser produced plasma EUV light source
    Yanagida, Tatsuya
    Nagano, Hitoshi
    Wada, Yasunori
    Yabu, Takayuki
    Nagai, Shinji
    Soumagne, Georg
    Hori, Tsukasa
    Kakizaki, Kouji
    Sumitani, Akira
    Fujimoto, Junichi
    Mizoguchi, Hakaru
    Endo, Akira
    [J]. EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY II, 2011, 7969
  • [9] Development of capillary Z-pinch discharge EUV light source
    Watanabe, M
    Kasao, T
    Okamoto, M
    Song, IH
    Okino, A
    Horioka, K
    Hotta, E
    [J]. FOURTH INTERNATIONAL SYMPOSIUM ON LASER PRECISION MICROFABRICATION, 2003, 5063 : 278 - 281
  • [10] ANOMALOUS PARTICLE PINCH FOR COLLISIONLESS PLASMA
    TERRY, PW
    [J]. PHYSICS OF FLUIDS B-PLASMA PHYSICS, 1989, 1 (09): : 1932 - 1934