Temperature-dependent S-shaped photoluminescence in ZnCdO alloy

被引:18
|
作者
Mohanta, Antaryami [1 ]
Thareja, Raj K. [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
关键词
CARRIER LOCALIZATION; QUANTUM; RECOMBINATION; ORIGIN;
D O I
10.1063/1.3391067
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoluminescence (PL) of ZnCdO alloy with medium Cd concentration (50 wt %) is studied at different temperatures and at varying excitation intensity. The PL peak position shows red-blue-red (S-shaped) shift with increase in temperature due to potential fluctuations on alloying. The line width of PL profile shows increasing-decreasing-increasing behavior with increase in temperature. The dependence of S-shape behavior on Cd concentration is analyzed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3391067]
引用
收藏
页数:4
相关论文
共 50 条
  • [21] ON THE S-SHAPED CHARACTERISTIC OF SEMICONDUCTORS AT LOW-TEMPERATURE
    PROCTOR, WG
    LAWAETZ, P
    MARFAING, Y
    TRIBOULET, R
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 110 (02): : 637 - 641
  • [22] On S-shaped and reversed S-shaped bifurcation curves for singular problems
    Ko, Eunkyung
    Lee, Eun Kyoung
    Shivaji, R.
    ELECTRONIC JOURNAL OF QUALITATIVE THEORY OF DIFFERENTIAL EQUATIONS, 2011, (31) : 1 - 12
  • [23] Ensemble Effects in the Temperature-Dependent Photoluminescence of Silicon Nanocrystals
    Jakob, Matthias
    Javadi, Morteza
    Veinot, Jonathan G. C.
    Meldrum, Al
    Kartouzian, Aras
    Heiz, Ulrich
    CHEMISTRY-A EUROPEAN JOURNAL, 2019, 25 (12) : 3061 - 3067
  • [24] Temperature-dependent photoluminescence properties of porous fluorescent SiC
    Weifang Lu
    Abebe T. Tarekegne
    Yiyu Ou
    Satoshi Kamiyama
    Haiyan Ou
    Scientific Reports, 9
  • [25] Temperature-dependent photoluminescence properties of porous fluorescent SiC
    Lu, Weifang
    Tarekegne, Abebe T.
    Ou, Yiyu
    Kamiyama, Satoshi
    Ou, Haiyan
    SCIENTIFIC REPORTS, 2019, 9 (1)
  • [26] Temperature-Dependent Photoluminescence Characteristics of GeSn Epitaxial Layers
    Pezzoli, Fabio
    Giorgioni, Anna
    Patchett, David
    Myronov, Maksym
    ACS PHOTONICS, 2016, 3 (11): : 2004 - 2009
  • [27] Temperature-dependent photoluminescence in light-emitting diodes
    Lu, Taiping
    Ma, Ziguang
    Du, Chunhua
    Fang, Yutao
    Wu, Haiyan
    Jiang, Yang
    Wang, Lu
    Dai, Longgui
    Jia, Haiqiang
    Liu, Wuming
    Chen, Hong
    SCIENTIFIC REPORTS, 2014, 4
  • [28] Temperature-dependent photoluminescence properties of Mn: ZnCuInS nanocrystals
    Zhou, Ping
    Zhang, Xiaosong
    Li, Lan
    Liu, Xiaojuan
    Yuan, Linlin
    Zhang, Xuguang
    OPTICAL MATERIALS EXPRESS, 2015, 5 (09): : 2069 - 2080
  • [29] TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE OF THE SN-IMPLANTED INSE
    GRIDIN, VV
    KASL, C
    COMINS, JD
    BESERMAN, R
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (12) : 6069 - 6072
  • [30] Temperature-Dependent Photoluminescence of Silicon Nanoporous Pillar Array
    Li Yong
    Wang Xiao-Bo
    Fan Zhi-Qiang
    Li Xin-Jian
    CHINESE PHYSICS LETTERS, 2014, 31 (04)