The Compact and High Power Density 7th Generation IGBT Module

被引：0
|
作者：
Theisen, Alexander [1 ]
Heinzel, T. [1 ]
Kawabata, J. [2 ]
Kusunoki, Y. [2 ]
Nishimura, Y. [2 ]
Onozawa, Y. [2 ]
Kobayashi, Y. [2 ]
Ikawa, O. [2 ]
机构：
[1] Fuji Elect Europe GmbH, Goethering 58, D-63067 Offenbach, Germany
[2] Fuji Elect Co Ltd, D-63067 Offenbach, Germany
来源：
2015 17TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'15 ECCE-EUROPE) | 2015年
关键词：
Power semiconductor device; Switching losses; Reliability; High power density systems;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Recently the main requirements found in the market are further downsizing and higher efficiency of power conversion systems. Enhanced power density of the power modules will be the key to succeed. The increasing package reliability in higher junction temperature operation will be the major challenge. By further improvement of the chip characteristics and the development of new high reliability package materials and technologies, the performance of the modules were significantly improved. Additionally, the maximum operating temperature was even increased to up to 175 degrees C. The new 7th generation IGBT module realized further downsizing and higher efficiency of power conversion systems.
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页数：10
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