Characterization of New FBK Double-Sided 3D Sensors with Improved Breakdown Voltage

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作者：
Dalla Betta, Gian-Franco [1 ]
Boscardin, Maurizio
Giacomini, Gabriele
Hoeferkamp, Martin
Mattedi, Francesca
Mattiazzo, Serena
McDuff, Haley
Mendicino, Roberto [1 ]
Povoli, Marco [1 ]
Seidel, Sally
Zorzi, Nicola
机构：
[1] Ist Nazl Fis Nucl, Sez Padova, Grp Collegato Trento, I-38123 Povo, TN, Italy
来源：
2013 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC) | 2013年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the characterization of a new version of double-sided 3D sensors fabricated at FBK (Trento, Italy). Owing to a modified design and improved technology, the new devices feature a sizable increase of the breakdown voltage with respect to the ones previously fabricated at FBK. Before irradiation, the breakdown voltage is in the range from similar to 70 V to similar to 130 V, after irradiation up to large fluences, it is typically larger than 200 V, that is high enough for proper 3D sensor biasing even after very high radiation fluences like those foreseen at the High Luminosity LHC.
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页数：6
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