ESD protection circuit with separated GGNMOS segment for input protection

被引：0

作者：

Hwang, Sang Joon ^{[1
]}

Lee, Chang Hun ^{[1
]}

Jung, Min Chul ^{[1
]}

Sung, Man Young ^{[1
]}

机构：

[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

来源：

2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ESD protection circuit in chip level protection is proposed as the electrostatic discharge (ESD) clamping circuit such as thick field oxide (TFO), grounded gate MOS (GGNMOS) and separated segment for input protection. The ESD protection circuit for input protection was implemented from the proposed ESD protection circuit. The GGNMOS applied to separated segment has been simulated by DESSIS of TCAD for thermal characteristic with human body model (HBM) pulse and realized the protection circuit for input protection has been simulated by HSPICE.

引用

页码：511 / 514

页数：4

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