Growth of SiC single crystals on patterned seeds by a sublimation method

被引：4
|
作者：
Yang, Xianglong [1 ]
Chen, Xiufang [1 ]
Peng, Yan [1 ]
Xu, Xiangang [1 ]
Hu, Xiaobo [1 ]
机构：
[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2016年 / 439卷
基金：
中国国家自然科学基金;
关键词：
Threading dislocation density; Patterned seeds; Lateral growth; SiC; VAPOR-PHASE EPITAXY; NUCLEATION; DENSITY;
D O I：
10.1016/j.jcrysgro.2015.12.030
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Growth of 6H-SiC on patterned seeds with the vertical sidewalls composed of {11-20} and {1-100} faces by a sublimation method at 1700-2000 degrees C was studied. Anisotropy in lateral growth rates was observed, i.e the growth rate towards < 11-20 > was faster than that along < 1-100 >. It was found that free lateral growth on mesas was accompanied by a sharp decrease in the density of threading dislocation. The dependence of lateral growth rate on growth conditions such as reactor pressure and growth temperature was investigated. The factors governing the process of lateral growth of 6H-SiC on patterned seeds were discussed. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：7 / 12
页数：6
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