Analysis of crack formation of Y123 single crystal substrate fabricated by the pulling method

被引：0

作者：

Egami, M ^{[1
]}

Itoga, N ^{[1
]}

Koyama, S ^{[1
]}

Izumi, T ^{[1
]}

Shiohara, Y ^{[1
]}

机构：

[1] ISTEC, Superconduct Res Lab, Koto Ku, Tokyo 1350062, Japan

来源：

ADVANCES IN SUPERCONDUCTIVITY XII | 2000年

关键词：

crack formation; chemical etching; single crystal substrate;

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We prepared a substrates by slicing an as-grown YBa2Cu3O7-x single crystal and a typical heating cycle was applied in the Air (750 degrees C /hour as increase/decrease rate up to 750 degrees C) which is similar to the film vapor deposition process to the wafer, and an additional crack formation was observed. We also found that in the case of the Ar atmosphere (1.5%O-2), no additional crack was formed even at the same heating cycle. This indicated that the origin of the additional crack formation was not only the effect of the thermal distortion but also that of the lattice distortion due to the oxygen diffusion or the mixture effect.

引用

页码：945 / 947

页数：3

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