The role of copper pretreatment on the morphology of graphene grown by chemical vapor deposition

被引：22
|
作者：
Gnanaprakasa, Tony J. [1 ]
Gu, Yuanxi [1 ]
Eddy, Steven K. [1 ]
Han, Zhenxing [1 ]
Beck, Warren J. [2 ]
Muralidharan, Krishna [1 ]
Raghavan, Srini [1 ,3 ]
机构：
[1] Univ Arizona, Dept Mat Sci & Engn, Tucson, AZ 85719 USA
[2] Univ Arizona, Dept Phys, Tucson, AZ 85719 USA
[3] Univ Arizona, Dept Chem & Environm Engn, Tucson, AZ 85719 USA
来源：
MICROELECTRONIC ENGINEERING | 2015年 / 131卷
关键词：
Graphene; CVD; Copper pretreatment; Electropolishing; Corrosion inhibitor; FILMS; SUBSTRATE; HYDROGEN; PT(111);
D O I：
10.1016/j.mee.2014.10.021
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of pretreatment of copper on the ensuing morphology and surface coverage of graphene grown using chemical vapor deposition (CVD) has been investigated. Specifically, graphene grown on electropolished copper (EP-Cu) was analyzed with respect to its surface morphology, surface roughness and thickness, and compared with graphene grown on as cold-rolled acetic acid cleaned copper (AA-Cu). Results show an improvement in the quality of graphene obtained using EP-Cu over AA-Cu. Additionally, electrochemical polarization studies were performed on annealed and graphene coated EP-Cu in acidic solutions. The results indicate that corrosion inhibition of EP-Cu is possible through the use of graphene films. (C) 2014 Elsevier B.V. All rights reserved.
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收藏
页码：1 / 7
页数：7
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