Measurement of Optical Two-Photon Gain in Electrically Pumped AlGaAs at Room Temperature

被引：19
|
作者：
Nevet, Amir [1 ]
Hayat, Alex [1 ]
Orenstein, Meir [1 ]
机构：
[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
来源：
PHYSICAL REVIEW LETTERS | 2010年 / 104卷 / 20期
关键词：
EMISSION; LASER; SEMICONDUCTORS; ABSORPTION; STATES;
D O I：
10.1103/PhysRevLett.104.207404
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We demonstrate experimentally two-photon gain in semiconductor structures, shown previously only in dilute atomic systems. Two-photon gain is directly observed and characterized in electrically pumped room-temperature semiconductor devices, in good agreement with theory. The semiconductor structure was designed to enhance the two-photon interaction and reduce parasitic effects. The nonlinear two-photon amplification is studied directly by examining the current dependence of the optical intensity growth, and indirectly by monitoring the reduction in one-photon emission due to two-photon transitions above transparency.
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页数：4
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