Room-temperature ferromagnetism in highly Cr-doped II-VI diluted magnetic semiconductor Zn1-xCrxTe

被引：57
|
作者：
Saito, H [1 ]
Zayets, V [1 ]
Yamagata, S [1 ]
Ando, K [1 ]
机构：
[1] AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 10期
关键词：
D O I：
10.1063/1.1556117
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Highly Cr-doped II-VI diluted magnetic semiconductor (DMS) Zn1-xCrxTe films with a ferromagnetic long-range order have been grown. A phase diagram of Zn1-xCrxTe in relation to the growth temperature and Cr concentration was determined. Magnetic circular dichroism measurements revealed that a magnetically single phase of DMS Zn1-xCrxTe is obtained in the films with Cr concentration up to x=0.20. Spontaneous magnetization of the film with x=0.20 disappears around 300 K, indicating that the Zn1-xCrxTe is a DMS with room-temperature ferromagnetism. (C) 2003 American Institute of Physics.
引用
收藏
页码：6796 / 6798
页数：3
相关论文
共 50 条
  • [21] Room-temperature ferromagnetism in Co-doped ZnO diluted magnetic semiconductor
    Wang Yi
    Sun Lei
    Han De-Dong
    Liu Li-Feng
    Kang Jin-Feng
    Liu Xiao-Yan
    Zhang Xing
    Han Ru-Qi
    ACTA PHYSICA SINICA, 2006, 55 (12) : 6651 - 6655
  • [22] Room-temperature ferromagnetism in Cr-doped GaN single crystals
    Park, SE
    Lee, HJ
    Cho, YC
    Jeong, SY
    Cho, CR
    Cho, S
    APPLIED PHYSICS LETTERS, 2002, 80 (22) : 4187 - 4189
  • [23] Room-temperature ferromagnetism in lightly Cr-doped ZnO nanoparticles
    Duan, L. B.
    Zhao, X. R.
    Liu, J. M.
    Wang, T.
    Rao, G. H.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 99 (03): : 679 - 683
  • [24] Room-temperature ferromagnetism in Co-, Cr-, and V-doped ZnO diluted magnetic semiconductor
    Ahmed, S. A.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2017, 123 (06):
  • [25] Room-temperature ferromagnetism in Co-, Cr-, and V-doped ZnO diluted magnetic semiconductor
    S. A. Ahmed
    Applied Physics A, 2017, 123
  • [26] Room-temperature ferromagnetism in lightly Cr-doped ZnO nanoparticles
    L. B. Duan
    X. R. Zhao
    J. M. Liu
    T. Wang
    G. H. Rao
    Applied Physics A, 2010, 99 : 679 - 683
  • [27] Origin of room-temperature ferromagnetism for cobalt-doped ZnO diluted magnetic semiconductor
    Peng, Long
    Zhang, Huai-Wu
    Wen, Qi-Ye
    Song, Yuan-Qiang
    Su, Hua
    Xiao, Q. John
    CHINESE PHYSICS LETTERS, 2008, 25 (04) : 1438 - 1441
  • [28] Origin of room-temperature ferromagnetism for cobalt-doped ZnO diluted magnetic semiconductor
    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
    不详
    Chin. Phys. Lett., 2008, 4 (1438-1441):
  • [29] Mechanical, elastic and anharmonic properties of Zn1-xCrxTe(0≤x≤1) diluted magnetic semiconductor
    Shinde, S
    Pandya, A
    Jha, PK
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2006, 44 (02) : 148 - 151
  • [30] Role of point defects in room-temperature ferromagnetism of Cr-doped ZnO
    Liu, Hui
    Zhang, Xiao
    Li, Luyan
    Wang, Y. X.
    Gao, K. H.
    Li, Z. Q.
    Zheng, R. K.
    Ringer, S. P.
    Zhang, Bei
    Zhang, X. X.
    APPLIED PHYSICS LETTERS, 2007, 91 (07)
12345