Nitridation effects of Si(111) substrate surface on InN nanorods grown by plasma-assisted molecular beam epitaxy

被引：9
|
作者：
Feng, Shan [1 ]
Tan, Jin [1 ,2 ]
Li, Bin [1 ]
Song, Hao [1 ]
Wu, Zhengbo [1 ]
Chen, Xin [1 ]
机构：
[1] China Univ Geosci, Fac Mat Sci & Chem, Wuhan 430074, Peoples R China
[2] China Univ Geosci, Engn Res Ctr Nanogeomat, Minist Educ, Wuhan 430074, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 621卷
基金：
中国国家自然科学基金;
关键词：
Indium nitride; Nanorods; PAMBE; Substrate nitridation; Morphology; GAN; PHOTOLUMINESCENCE; NANOWIRES; ENERGY; LAYER; SI;
D O I：
10.1016/j.jallcom.2014.09.211
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The InN nanorods were grown on Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE) system, with a substrate nitridation process. The effect of nitriding time of Si(1 1 1) substrate on morphology, orientation and growth temperature of InN nanorods was characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD). The deviation angle of InN nanorods was measured to evaluate the alignment of arrays. The results showed that InN nanorods could not be formed with 1 min nitridation of Si(1 1 1) substrate, but they could be obtained again when the nitriding time was increased to more than 10 min. In order to get aligned InN nanorods, the growth temperature needed to increase with longer nitriding time. The vertical orientation of InN nanorods could be enhanced with increase in nitriding time. The influence of the substrate nitridation on the photoluminescence (PL) spectra of InN nanorods has been investigated. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：232 / 237
页数：6
相关论文
共 50 条
  • [41] The influence of indium monolayer insertion on the InN epifilm grown by plasma-assisted molecular beam epitaxy
    Yao, Yongzhao
    Sekiguchi, Takashi
    Sakuma, Yoshiki
    Ohashi, Naoki
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 521 - 524
  • [42] Material properties of GaN grown by radio frequency plasma-assisted molecular beam epitaxy on Si (111) substrates
    Androulidaki, M
    Amimer, K
    Tsagaraki, K
    Kayambaki, M
    Mikroulis, S
    Constantinidis, G
    Hatzopoulos, Z
    Georgakilas, A
    ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS, 2000, : 9 - 12
  • [43] Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
    SanchezGarcia, MA
    Calleja, E
    Monroy, E
    Sanchez, FJ
    Calle, F
    Munoz, E
    Hervas, AS
    Villar, C
    Aguilar, M
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1997, 2 (33-41):
  • [44] Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy
    Calleja, E
    SanchezGarcia, MA
    Monroy, E
    Sanchez, FJ
    Munoz, E
    SanzHervas, A
    Villar, C
    Aguilar, M
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) : 4681 - 4683
  • [45] Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
    Sánchez-García, M.A.
    Calleja, E.
    Monroy, E.
    Sánchez, F.J.
    Calle, F.
    Muñoz, E.
    Hervas, A. Sanz
    Villar, C.
    Aguilar, M.
    MRS Internet Journal of Nitride Semiconductor Research, 1997, 2
  • [46] pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy
    Yusoff, M. Z. Mohd
    Hassan, Z.
    Ahmed, Naser M.
    Abu Hassan, H.
    Abdullah, M. J.
    Rashid, M.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 16 (06) : 1859 - 1864
  • [47] The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy
    Anyebe, E. A.
    Zhuang, Q.
    Kesaria, M.
    Krier, A.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (08)
  • [48] Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy
    Schenk, HPD
    Kipshidze, GD
    Lebedev, VB
    Shokhovets, S
    Goldhahn, R
    Kräusslich, J
    Fissel, A
    Richter, W
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 359 - 364
  • [49] A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
    Fernandez-Garrido, S.
    Grandal, J.
    Calleja, E.
    Sanchez-Garcia, M. A.
    Lopez-Romero, D.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)
  • [50] A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
    Fernández-Garrido, S.
    Grandal, J.
    Calleja, E.
    Sánchez-García, M.A.
    López-Romero, D.
    Journal of Applied Physics, 2009, 106 (12):
12345