CHARACTERIZATION OF INTERFACE LAYERS OF A SOLID SOLUTION FORMED DURING THE GROWTH OF A CARBIDE LAYER ON SILICON FROM HYDROGEN CONTAINING COMPOUNDS

The work discusses mechanisms of formation, crystal structure, some features of defect formation, and composition of the solid carbide film formed from a hydrocarbon and hydrides on the Si surface at low (< 900 degrees C) growth temperatures. It is shown that a system of macrodefects and a subsurface structure similar to porous silicon are formed under a carbide layer as a result of long-term growth of thick carbide layers. The presence of a solid solution transition layer between the carbide layer and the silicon substrate is manifested in the structure of luminescence spectra of studied structures in the near IR region. The most probable mechanisms of observed radiative transitions were established by analysing the temperature behavior of spectral lines and calculating the layer distribution of structures of light-excited non-equilibrium charge carriers.