The effects of implanted nitrogen ions on the magnetic properties of Mn-implanted GaN

被引：20
|
作者：
Baik, JM [1 ]
Lee, JL [1 ]
机构：
[1] Pohang Univ Sci & Technol, POSTECH, Dept Mat Sci & Engn, Pohang 790784, Gyeonbuk, South Korea
来源：
METALS AND MATERIALS INTERNATIONAL | 2004年 / 10卷 / 06期
关键词：
(Ga; Mn)N; ion implantation; ferromagnetic semiconductor; SRPES;
D O I：
10.1007/BF03027418
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of implanted N ions on the magnetic properties of Mn-implanted GaN were studied. The ferromagnetic signal increased when N ions were implanted into GaN prior to the implantation of Mn ions and annealed at 900degreesC. Synchrotron radiation photoemission spectroscopy revealed that the Ga-Mn magnetic phases contributing to ferromagnetic properties increased. Mn-N binary phases such as Mn6N2.58 and Mn3N2 decreased and sheet resistivity significantly increased, indicating a reduction of N-vacancies. Consequently, it is suggested that the enhancement of the ferromagnetic properties in (Mn+N)-implanted GaN originated from the decrease of N-vacancies and the increase of Ga-Mn magnetic phases.
引用
收藏
页码：555 / 558
页数：4
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