Solar Cells with Gallium Phosphide / Silicon Heterojunction

被引:5
|
作者
Darnon, Maxime [1 ]
Varache, Renaud [2 ]
Descazeaux, Mederic [1 ,2 ]
Quinci, Thomas [1 ,2 ,3 ]
Martin, Mickael [1 ]
Baron, Thierry [1 ]
Munoz, Delfina [2 ]
机构
[1] Univ Grenoble Alpes, CNRS, CEA Leti Minatec, LTM, F-38054 Grenoble, France
[2] CEA, INES, LITEN, F-73375 Le Bourget Du Lac, France
[3] Univ Europeenne Bretagne, INSA, FOTON OHM, F-35708 Rennes, France
关键词
RESISTANCE; GAP; SI;
D O I
10.1063/1.4931514
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on similar to 5x5 cm(2) polished samples.
引用
收藏
页数:5
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