Wide Band Gap Gallium Phosphide Solar Cells

被引：35
|
作者：
Lu, Xuesong [1 ]
Huang, Susan [2 ]
Diaz, Martin B. [1 ]
Kotulak, Nicole [1 ]
Hao, Ruiying [1 ]
Opila, Robert [2 ]
Barnett, Allen [1 ]
机构：
[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA
[2] Univ Delaware, Dept Mat Sci Engn, Newark, DE 19716 USA
来源：
IEEE JOURNAL OF PHOTOVOLTAICS | 2012年 / 2卷 / 02期
关键词：
Gallium phosphide (GaP); liquid phase epitaxy (LPE); quantum efficiency (QE); wide band gap; EFFICIENCY; JUNCTION;
D O I：
10.1109/JPHOTOV.2011.2182180
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Gallium phosphide (GaP), with its wide band gap of 2.26 eV, is a good candidate for the top junction solar cell in a multijunction solar cell system. Here, we design, fabricate, characterize, and analyze GaP solar cells. Liquid phase epitaxy is used to grow the semiconductor layers. Four generations of GaP solar cells are developed and fabricated with each solar cell structure being designed and improved based on the first principles analyses of the predecessor solar cells. Quantum efficiency and current-voltage measurements are used to analyze the solar cell performance and to develop predictive models. We create a GaP solar cell with an efficiency of 2.42% under AM 1.5G one sun illumination.
引用
收藏
页码：214 / 220
页数：7
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