Design and fabrication of wideband transimpedance amplifier by using InGaAs/InP HBT technology

被引：0
|
作者：
Lee, JM [1 ]
Kim, SI [1 ]
Min, BG [1 ]
Ju, CW [1 ]
Lee, KH [1 ]
机构：
[1] Elect & Telecommun Res Inst, Basic Res Lab, InP IC Team, Taejon 305350, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2004年 / 45卷
关键词：
InGaAs/InP HBT; transimpedance amplifier;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A wideband transimpedance amplifier was developed by using molecular-beam-epitaxy- based InGaAs/InP HBT technology. The developed InGaAs/InP HBTs showed a cut-off frequency (f(T)) of 138 GHz and a maximum oscillation frequency (f(max)) of 203 GHz. The design and performance of an InGaAs/InP transimpedance amplifier for 40 Gb/s receiver applications are presented. The developed transimpedance amplifier provides a bandwidth of 35 GHz and a transimpedance gain of 40.6 dBOmega. The IC dissipates 80 mW of power from a single 3.3 V supply and has a chip size of 0.354 mm(2). Packaged transimpedance amplifier modules were successfully fabricated. Clear 40 Gb/s data eyes of the fabricated transimpedance amplifier modules were achieved by 40 Gb/s multiplexing voltage input signals.
引用
收藏
页码：S906 / S908
页数：3
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